? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 20 v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 100 a t j = 125c 2 ma r ds(on) v gs = 10v, i d = 17a, note 1 280 m ds98932d(7/09) hiperfet tm power mosfet isoplus264 tm (electrically isolated tab) ixfl34n100 v dss = 1000v i d25 = 30a r ds(on) 280m symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 136 a i a t c = 25 c34a e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 550 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 40..120 / 9..27 n/lb. v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ weight 8g n-channel enhancement mode avalanche rated, low q g , high dv/dt, low t rr single-die mosfet features z silicon chip on direct-copper bond (dcb) substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z low rds (on) hdmos tm process z rugged polysilicon gate cell structure z avalanche rated z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications: z switched-mode and resonant-mode power supplies z dc-dc converters z dc choppers z laser drivers z ac and dc motor drives z robotics and servo controls isoplus264 g = gate d = drain s = source s g d isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. ixfl34n100 note 1. pulse test, t 300 s, duty cycle, d 2 %. please see ixfn36n100 data sheet for characteristic curves. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15v, i d = 17a, note 1 18 40 s c iss 9200 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1200 pf c rss 300 pf t d(on) 41 ns t r 65 ns t d(off) 110 ns t f 30 ns q g(on) 380 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 17a 65 nc q gd 185 nc r thjc 0.225 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 34 a i sm repetitive, pulse width limited by t jm 136 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 180 300 ns t j = 125c 330 ns q rm 2 c i rm 8 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus264 tm (ixfl) outline note: bottom heatsink meets ref: ixys co 0128 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 17a r g = 1 (external) i f = i s , v gs = 0v -di/dt = 100a/ s v r = 100v
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